By Steven M. Sandler and Charles E. Hymowitz
This page includes the detailed measurement and simulation results relating to the above entitled
article published in Power Technology Magazine.
Please note that the AEi57230 Power Mosfet model, the TL431 regulator and many other models are part
of the
AEi Systems Power IC Model Library for PSpice.
ID vs. VGS - Data Sheet results, compare to Figure 2 in the article

RdsOn vs. Temperature - Data Sheet results, compare to Figure 4 in the article

Body Diode Characteristics
|
ID
|
VF
measured
|
VF
Calc
|
%
Difference
|
|
|
|
|
|
|
1.00E-03
|
0.534
|
0.535
|
0.19%
|
|
5.00E-03
|
0.577
|
0.577
|
0.00%
|
|
1.00E-02
|
0.595
|
0.596
|
0.17%
|
|
5.00E-02
|
0.643
|
0.64
|
-0.47%
|
|
1.00E-01
|
0.665
|
0.662
|
-0.45%
|
|
2.50E-01
|
0.688
|
0.697
|
1.31%
|
|
5.00E-01
|
0.736
|
0.733
|
-0.41%
|
|
|
|
|
|
|
|
average
difference
|
0.05%
|
1 mA Simulated Result.

1 mA Measured Result.

100 mA Simulated Result.

100 mA Measured Result.

500 mA Simulated Result.

500 mA Measured Result.

1A Simulated Result.

1A Measured Result.

Simulated Error Amplifier Gain.

Measured Error Amplifier Gain.
