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SPICE Model Supports LDO Regulator Design
Continuation of Article in Power Electronics Technology May 2005

By Steven M. Sandler and Charles E. Hymowitz

This page includes the detailed measurement and simulation results relating to the above entitled article published in Power Technology Magazine.

Please note that the AEi57230 Power Mosfet model, the TL431 regulator and many other models are part of the AEi Systems Power IC Model Library for PSpice.

ID vs. VGS - Data Sheet results, compare to Figure 2 in the article

RdsOn vs. Temperature - Data Sheet results, compare to Figure 4 in the article

Body Diode Characteristics

ID

VF measured

VF Calc

% Difference

 

 

 

 

1.00E-03

0.534

0.535

0.19%

5.00E-03

0.577

0.577

0.00%

1.00E-02

0.595

0.596

0.17%

5.00E-02

0.643

0.64

-0.47%

1.00E-01

0.665

0.662

-0.45%

2.50E-01

0.688

0.697

1.31%

5.00E-01

0.736

0.733

-0.41%

 

 

 

 

 

average difference

0.05%

1 mA Simulated Result.

1 mA Measured Result.

100 mA Simulated Result.

100 mA Measured Result.

500 mA Simulated Result.

500 mA Measured Result.

1A Simulated Result.

1A Measured Result.

Simulated Error Amplifier Gain.

Measured Error Amplifier Gain.



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